Method for fabricating semiconductor device capable of preventing damage by wet cleaning process

摘要

A method for fabricating a semiconductor device capable of preventing an inter-layer insulation layer from being damaged during a wet cleaning process. The method includes the steps of: forming a plurality of conductive structures on a substrate; forming an etch stop layer and a flowable insulation layer on the plurality of conductive structures subsequently; forming a photoresist pattern on the flowable insulation layer; forming a plurality of contact holes by etching the flowable insulation layer with use of the photoresist pattern as an etch mask, thereby exposing portions of the etch stop layer; forming at least one barrier layer on the contact holes; removing said at least one barrier layer and the etch stop layer disposed at each bottom portion of the contact holes to thereby expose the substrate; and cleaning the contact holes.