发明名称 |
Method of manufacturing shallow trench isolation structure using HF vapor etching process |
摘要 |
In a method of manufacturing a shallow trench isolation (STI) structure using a HF vapor etching process according to some embodiments of the invention, a trench is formed in a semiconductor substrate. A buffer layer and a first insulating layer, which fill the trench, are formed. A portion of the first insulating layer is removed by performing an etching process using HF vapor, thereby removing a void existing in the first insulating layer. A second insulating layer filling the trench is formed on the etched first insulating layer. Other embodiments of the invention are described and claimed.
|
申请公布号 |
US2005074948(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
US20040949426 |
申请日期 |
2004.09.24 |
申请人 |
KO HYUNG-HO;SHIM WOO-GWAN;KIM YU-KYUNG;HONG CHANG-KI;CHOI SANG-JUN |
发明人 |
KO HYUNG-HO;SHIM WOO-GWAN;KIM YU-KYUNG;HONG CHANG-KI;CHOI SANG-JUN |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|