| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN system semiconductor having a low dislocation area with few crystal defects by epitaxial growth. <P>SOLUTION: The GaN system semiconductor is grown while forming a facet structure, and adjacent facet structures are combined. By the growth of the facet structure, dislocation from the ground is bent, and the low dislocation area is formed. Furthermore, the bent dislocation is collected to the overlap area of each facet side, by growing the facet structure and combining adjacent facet structures. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
