| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor light emitting element which can be increased in luminous efficiency while the complication of a growing process is suppressed, and to provide a method of manufacturing the element. <P>SOLUTION: After a rugged AlN layer 4 is formed on an n-type GaN clad layer 3, an active layer (InGaN well layer 5) is formed in a rugged state by forming the active layer on the rugged AlN layer 4. The rugged AlN layer 4 is formed in an aggregated state, by forming an AlN layer having a thickness of about 10Å on the n-type GaN clad layer 3 and performing heat treatment on the AlN layer at a temperature of about 830°C. Consequently, the area of the active layer increases and compositional nonuniformity occurs in the active layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
