发明名称 PLATING APPARATUS, AND METHOD FOR PLATING SEMICONDUCTOR SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent the surface of a plating liquid in a plating tank from getting rough, even when stirring efficiency for the plating liquid has been further increased. <P>SOLUTION: This plating apparatus comprises a wafer-supporting plate 3 and an anode electrode 4 vertically arranged so as to face each other in the plating liquid 2 in the plating tank 1; and an electric field-shielding plate 7 having an open hole 9 and an impeller 15 for stirring the plating liquid 2 around the open hole 9 vertically arranged between the wafer-supporting plate 3 and the anode electrode 4. The electric field-shielding plate 7 shields the electric field generated by the anode electrode 4 having a slightly larger size than a semiconductor wafer 6, in the region except the open hole 9 to secure the uniformity of a plated film within the surface of a semiconductor wafer 6; and prevents the surface of the plating liquid 2 in the plating tank 1 from getting rough, even when a rotational speed of the impeller 15 has been increased to an extent, or equivalently, the stirring efficiency for the plating liquid 2 has been further increased. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005089812(A) 申请公布日期 2005.04.07
申请号 JP20030324205 申请日期 2003.09.17
申请人 CASIO COMPUT CO LTD 发明人 KOTANI SHOICHI
分类号 C25D7/12;C25D17/10;C25D21/10;H01L21/288;H01L21/3205;H01L23/52;(IPC1-7):C25D21/10;H01L21/320 主分类号 C25D7/12
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