发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate that suppresses heat generation in light projection to reduce image defects caused owing to strain of a substrate due to heat generation. SOLUTION: An upper electrode 12 connected to a pixel electrode 95 has a high-fusion-point metal layer 12b as its top layer and an Al metal layer 12a consisting mainly of Al as the 2nd layer from the top at least in an area where it is connected to the pixel electrode 95. In other areas, the high-fusion-point layer 12b is not formed and the top layer is an Al metal layer 12a consisting mainly of Al with high reflectivity. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005092122(A) |
申请公布日期 |
2005.04.07 |
申请号 |
JP20030328808 |
申请日期 |
2003.09.19 |
申请人 |
NEC CORP |
发明人 |
HAYASHI KENICHI;SHIMAMOTO HIROFUMI;MATSUZAKI TADAHIRO |
分类号 |
G02F1/1368;G02F1/1343;G02F1/1362;H01L27/12;H01L29/786;(IPC1-7):G02F1/136;G02F1/134 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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