| 发明名称 |
Power transistor used in direct current/DC converter, has gate electrode whose lower edge is obliquely angled, arranged between semiconductor cell height and semiconductor cell surface |
| 摘要 |
<p>A gate electrode (62) which is arranged between the semiconductor cell height (72) and semiconductor cell surface, has a lower edge with obliquely angled profile. The gate electrode and field electrode (63) are insulated by the insulating layers (32,33,322).</p> |
| 申请公布号 |
DE10341592(A1) |
申请公布日期 |
2005.04.07 |
| 申请号 |
DE2003141592 |
申请日期 |
2003.09.09 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HIRLER, FRANZ;TIHANYI, JENOE;HENNINGER, RALF;KRUMREY, JOACHIM;POELZL, MARTIN;RIEGER, WALTER |
| 分类号 |
H01L21/336;H01L29/06;H01L29/40;H01L29/423;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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