| 摘要 |
A CMOS(complementary metal oxide semiconductor) image sensor is provided to protect a previously formed color filter in a rework process during a color filter formation process by forming an isolation layer between color filters. A substrate has a light receiving region. An interlayer dielectric is formed on the substrate. A plurality of metal interconnections are formed on the interlayer dielectric, exposing the light receiving region. The metal interconnection and the interlayer dielectric are covered with a passivation layer. A plurality of color filters(18,19,20) are formed on the passivation layer. An insulation layer is formed on at least one of the plurality of color filters.
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