Methods for manufacturing stacked gate structure and field effect transistor povided with the same

摘要

The present invention provides a method for manufacturing a stacked-gate structure in a semiconductor device. The method includes the steps of sequentially forming a gate dielectric layer, a poly-silicon layer, a titanium layer, and a WNX layer on a semiconductor substrate, carrying out a rapid thermal annealing (RTA) in a nitrogen ambient, forming a silicon nitride layer on the tungsten layer, and patterning the multilayer thin-film structure into a predetermined configuration.