发明名称 Measuring method and apparatus of thin film thickness
摘要 In an apparatus for measuring thickness of a thin film, which is formed through a conductor, preventing the measurement from an error due to the curve or bend on a substrate surface or a moving surface of a stage, but without necessity of a large-scaled facility, an electric filed is applied between a probe 10 and a stage 8, so as to obtain an electrostatic capacitance of the substrate 3, an electrostatic capacitance of an insulating film, which is formed between the substrate 3, and an electrostatic capacitance defined starting from the substrate 3 to the thin film 4. The electrostatic capacitance between the substrate 3 and the thin film 4 is measured at plural numbers of places covering over the entire surface of the thin film 4. The probe 10 is so supported that the contact load "P" comes to be constant, by the probe 10 onto the thin film 4. A contact area of the probe 10 between the thin film 4 is calculated out through a predetermined equation, assuming the load "P" is constant. From respective electrostatic capacitances and the contact area measured, a distribution of thickness of the thin film 4 over the entire area thereof.
申请公布号 US2005073323(A1) 申请公布日期 2005.04.07
申请号 US20040902132 申请日期 2004.07.30
申请人 KOHNO RYUJI;NAGATA TATSUYA;WATASE NAOKI;WATANABE MICHIHIRO 发明人 KOHNO RYUJI;NAGATA TATSUYA;WATASE NAOKI;WATANABE MICHIHIRO
分类号 G01B7/06;G01R27/26;H01L21/66;(IPC1-7):G01R27/26 主分类号 G01B7/06
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