POLISHING CLOTH, POLISHING CLOTH PROCESSING METHOD, AND SUBSTRATE MANUFACTURING METHOD USING SAME

摘要

A polishing cloth for polishing a semiconductor substrate is characterized in that at least grooves having a radial pattern are formed in the surface of the cloth, the grooves are such that the ratio (the average of the total volume of the grooves right under the substrate/the area of the substrate) is 0.06 to 0.23, the depth of the grooves nearer to the center than the substrate is less than the depth of the grooves right under the substrate, the intersection of the grooves at the center of the radial pattern of the grooves is not present right under the substrate. Its processing method and a substrate manufacturing method using the same are also disclosed. A necessary amount of abrasive can thus be fed to the central part of the substrate during polishing of the substrate, and therefore the substrate can be polished with high planarity. Further separation, twist, burrs are not caused, thereby not scratching the surface of the semiconductor substrate.