| 摘要 |
A semiconductor device is provided to increase the align margin of a contact hole by performing an etch process in forming a trench while a wafer is tilted so that the opening part of the trench is narrower than the bottom part of the trench. A trench(T) for device isolation is formed in a semiconductor substrate(200), and the cross section of the opening of the trench is smaller than that of any one of the inside of the trench. The width of the trench becomes smaller as it goes from the bottom part of the trench to the opening part of the trench. The inside of the trench is vacuum or filled with an insulation material. The insulation material is one of carbide, oxide, nitride or oxynitride.
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