| 摘要 |
A pattern for testing a damascene process margin is provided to shorten a process interval and a development interval by effectively testing a damascene process margin by one test pattern. The first metal contact group(200) including the first to fourth metal contacts(202,204,206,208) is formed on an active region(20) of a substrate, made of a regular square whose one side is open. The second metal contact group(300) including the fifth to eight metal contacts(302,304,306,308) is formed on a gate region(30) of the substrate, made of a regular square whose one side is open. The first metal interconnection(100) includes the first to fourth straight bars. Both ends of the first bar extend to the center of the first and second metal contact group. The second straight bar extends between the first and second metal contact groups, orthogonal to the first straight bar. The third and fourth straight bars are extended from both ends of the second straight bar to a direction parallel with the first straight bar. The second, third and fourth straight bars surround the first and second metal contact groups. The second metal interconnection(400) is extended in a direction parallel with the third or fourth straight bar, separated from the third or fourth straight bar by a predetermined interval. The third metal contact group(500) including at least one of the ninth metal contact(502) is formed under the second metal interconnection.
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