发明名称 |
CIRCUIT AND METHOD FOR READING DATA IN SEMICONDUCTOR MEMORY |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a circuit and a method for reading data, equipped with a bias current supply part for the purpose of compensating for a current flowing in a unit cell. <P>SOLUTION: This circuit is provided with a selection part for selecting a unit cell according to an address signal, a clamping part for supplying the clamping voltage of a fixed level to the bit line of the unit cell according to a clamping control signal, a precharging part for precharging a sensing node by the voltage of a fixed level according to the applied control signal of a first state in a precharging mode and compensating for the current reduction of the bit line connected to the selected unit cell according to the applied control signal of a second state in a data sensing operation mode through a sensing node, and a sense amplifier part for comparing the level of the sensing node with a reference level and sensing data held in the selected unit cell when the control signal of the second state is applied to the precharging part. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005093044(A) |
申请公布日期 |
2005.04.07 |
申请号 |
JP20040170353 |
申请日期 |
2004.06.08 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
OH HYUNG-ROK;CHO WOO-YEONG;KWAK CHOONG-KEUN |
分类号 |
G11C13/00;G11C7/06;G11C7/12;G11C13/02;G11C16/02;G11C16/26;H01L27/105;H01L45/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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