| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent a short circuit by so-called ion migration from accurring between rewirings in a semiconductor device called a CSP. <P>SOLUTION: A recessed part 7 is formed on the upper surface of a protective film 5 between rewirings 9. A copper columnar electrode 10 is provided on the upper surface of a connection pad of the rewiring 9. A sealing film 11 is formed on the upper surface of the protective film 5 including the rewirings 9. Since the recessed part 7 is formed on the upper surface of the protective film 5 between wires of the rewiring 9, a separation passage of a copper ion is lengthened by two times the depth of the recessed part 7. It is therefore possible to prevent a short circuit by the so-called ion migration from occurring between the wires of the rewiring 9. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
