| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory cell suitable for high integration that can reduce magnetic influences from surroundings, and allows stable writing and reading magnetic information. SOLUTION: The magnetic memory cell comprises: a substrate 1; an MTJ device 20 selectively formed on the substrate 1; a first insulation layer 41 that is formed to cover a region on the substrate 1 other than where the MTJ device 20 is formed, and to cover a whole end surface 20S of the MTJ device 20; a magnetic shield layer 30 that is formed to surround a portion of the MTJ device 20 via the first insulation layer 41 and is electrically insulated from the substrate 1 and MTJ device 20; and a second insulation layer 42 formed to cover portions other than the MTJ device 20, wherein the MTJ device 20 and magnetic shield layer 30 are structured to be magnetostatically coupled to each other. This stabilizes the threshold value of a reverse magnetic field in the MTJ device 20, and enables writing and reading magnetic information in a stable manner even in high integration. COPYRIGHT: (C)2005,JPO&NCIPI
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