| 摘要 |
PROBLEM TO BE SOLVED: To enhance the long term reliability of a nitride semiconductor laser element. SOLUTION: The group III-V nitride semiconductor laser element comprises a substrate, a light emitting layer provided on the substrate, a clad layer provided on the light emitting layer, and a buried layer provided on the substrate in contact with the opposite side faces of the light emitting layer or the clad layer wherein the buried layer contains phosphorus atoms or arsenic atoms by an atomic fraction of≤20%. COPYRIGHT: (C)2005,JPO&NCIPI
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