| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of which the area is small, the operating characteristics are good, and the breakdown strength property of a transistor is good. <P>SOLUTION: In this semiconductor device, a positive pump circuit 14 for driving is driven by external power supply voltage EXVDD (e.g. 1.8 V), and generates positive voltage VPD (e.g. 2.4 V). A negative pump circuit 15 for an internal operation is driven by the positive voltage VPD, and generates negative voltage VNA (e.g -9.2 V) required for a word line in an internal operation such as an erase operation. Therefore, the negative pump circuit 15 for the internal operation requires only less numbers of pumps than a conventional circuit which is driven by the external power source voltage EXVDD (e.g. 1.8 V), and hence the area of the circuit is reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
