| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment device having an electrostatic attraction electrode capable of controlling the temperature of a semi-conductor wafer under etching with high efficiency. SOLUTION: The plasma treatment device has an electrode block S having a dielectric film 4 on a surface and a refrigerant passage 6 formed therein, and has a holding stage of holding a semi-conductor wafer W and controlling the temperature thereof via the dielectric film on the surface of the electrode block. The plasma treatment device further has a refrigerating cycle 50 comprising a heat exchanger 54 with a compressor 52, a condenser 55, an expansion valve 53 and a heater built therein and an evaporator. The electrode block S is used for the evaporator of the refrigerating cycle, and a temperature control device of the direct expansion system to perform expansion by directly circulating the refrigerant in the electrode block controls the temperature of the electrode block S. COPYRIGHT: (C)2005,JPO&NCIPI |
