| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor module whose switching element will not receive damage due to the electromagnetic effect generated between the switching element and a control wiring or the like, in the semiconductor module comprising the switching element, the control wiring or the like. SOLUTION: The semiconductor module 100 is equipped with semiconductor-switching elements 1a, 1b, main electrodes 3a, 3b, 3c, control wires 4a, 4b and control cathode wires 5a, 5b. In the semiconductor module 100, the control wires 4a, 4b and the control cathode wires 5a, 5b are respectively provided with a part substantially parallel to the arranging direction of a main electrode. Further, the semiconductor module is provided with a wiring structure, wherein one of the wires, in which a current in the same direction as the main current is conducted to flow through one part among the control wires 4a, 4b and the control cathode wires 5a, 5b when the semiconductor-switching elements 1a, 1b are turned on, is arranged nearer to the main electrodes 3a, 3b, 3c than to the other wires. COPYRIGHT: (C)2005,JPO&NCIPI |
