| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral vapor phase epitaxial growth device which has a relative structure of a susceptor and a temperature soaking plate that is capable of heating a substrate uniformly so as to make crystals more uniform in characteristics through its surface. SOLUTION: The lateral vapor phase epitaxial growth device is equipped with the temperature soaking plate 4 which is stacked up on the substrate 2 housed and supported inside the opening 7 of the susceptor 1, and overlapped with the rear surface of the substrate 2, the substrate 2, and a heating means 8 for heating both the temperature soaking plate 4 and the susceptor 1. The temperature soaking plate 4 which is so shaped as to cover the substrate 2 is installed on the substrate 2. The temperature soaking plate 4 is formed with the lower contacting surface 4a of the same shape with that of the substrate 2, and an upper temperature soaking plate 4b that is so shaped as to cover the substrate 2, and may be installed on the substrate 2. COPYRIGHT: (C)2005,JPO&NCIPI
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