发明名称 |
Semiconductor device and driving circuit for semiconductor device |
摘要 |
A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electrode (15) provided via a gate oxide film (21) on a surface of an N<-> epitaxial layer (2) between the P diffusion regions (5 and 6). The gate oxide film (21) is formed in a thickness having a gate breakdown voltage higher than the element breakdown voltage of a typical field oxide film and the like.
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申请公布号 |
US2005072990(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
US20040866677 |
申请日期 |
2004.06.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TERASHIMA TOMOHIDE |
分类号 |
H01L29/70;H01L21/8238;H01L21/8249;H01L27/06;H01L27/092;H01L29/73;H01L29/739;H03K17/04;(IPC1-7):H01L29/80 |
主分类号 |
H01L29/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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