FABRICATION METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to reduce the resistance of a sidewall of a SAS(self-aligned source) region by performing a tilt implantation process at a predetermined angle when an impurity ion implantation process is performed to form the SAS region. Linear trench lines are continuously formed in a semiconductor substrate. A gate oxide layer line is formed on the semiconductor substrate except the trench line. Gate lines vertical to the trench line are continuously formed on the trench line and the gate oxide layer line. The gate oxide layer line and the trench line positioned between the gate lines are etched. Impurity ions are implanted into the etched region to form a SAS region wherein ions are implanted into the semiconductor substrate by a tile implantation process.