| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a thin-film semiconductor device having improved mass production properties at low costs. SOLUTION: First, a substrate 1 is subjected to anodization to form a porous layer 2. Then, a thin-film semiconductor layer 3 is formed on the porous layer 2. Further, a semiconductor device is machined by using the thin-film semiconductor layer 3, and wiring is formed between the semiconductor device and other semiconductor devices. After that, the semiconductor device and another substrate 6 are adhered or joined, and the semiconductor device is separated from the substrate 1. Further, the thin-film semiconductor layer 3 is partially eliminated from the separation surface side of the separated semiconductor device, and the semiconductor device and other semiconductor devices are electrically insulated. COPYRIGHT: (C)2005,JPO&NCIPI |
