| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect organic transistor comprising an organic semiconductor layer of high mobility and on/off ratio. SOLUTION: A gate electrode 12 is disposed on an insulating substrate 11, on which a gate insulating layer 13 is disposed, and further, a source electrode 15 and a drain electrode 14 are disposed on it, on which an organic semiconductor layer 16 and a protective film 17 are arranged. The gate insulating layer 16 contains an optical anisotropic material, and the organic semiconductor layer is oriented by the optically anisotropic material. COPYRIGHT: (C)2005,JPO&NCIPI
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