| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown strength lateral MOS transistor having a structure which can obtain a breakdown strength in a higher ON state. SOLUTION: An n<SP>+</SP>source region 4 and a p<SP>+</SP>contact region 9 are formed at a substantially constant distance in a p-type body region 3, and a gate oxide film 5 is formed on a surface at an end of the p-type body region 3. Further, the n<SP>+</SP>drain region 7 of an arcuate shape is formed at a distance from the p-type body region 3 in an n-type semiconductor layer 2. A plurality of n<SP>+</SP>source regions 4 are disposed annularly around a periphery of the n<SP>+</SP>drain region 7 of the arcuate shape. When the sum of lengths of the annular n<SP>+</SP>source regions 4 is W (=W1+W2+W3+W4), and a diameter of the n<SP>+</SP>drain region 7 is D, the D of a drain diameter is set in a range of W/10≤D≤W in order to obtain an ON breakdown strength of 500 V or more. COPYRIGHT: (C)2005,JPO&NCIPI
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