| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a TFT with improved characteristics, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device has at least one thin-film transistor having a channel region 113n, a semiconductor layer having a crystalline region including a source region and a drain region 112, a gate insulating film 107 provided between a gate electrode 108n and a channel region, and an interlayer insulating film 117 on the semiconductor layer. At least one portion of the channel region, source region, and drain region contains a catalyst element for accelerating crystallization; and the interlayer insulating film contains a gettering element having operation for attracting the catalyst element, and contains the catalyst element at higher concentration than that of the channel region. COPYRIGHT: (C)2005,JPO&NCIPI
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