发明名称 SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To make an opening for supplying gas unlikely to be sputtered. SOLUTION: A plasma-generating means 280 is installed in a treatment chamber 201, in order to form a plasma generation region inside the treatment chamber 201. In an upper part of the treatment chamber, an opening 238 for supplying gas is formed. The opening is blocked by a cap-like lid 233 to form a buffer chamber 237 for introducing the gas into the lid. The lid 233 is grounded. The opening 238 is covered by a shielding plate 240, which is formed of an insulating material and has a diameter larger than that of the opening, while a plurality of gas blowout ports 239 are formed between the shielding plate 240 and the periphery of the opening 238. Due to this structure, the grounded lid 233 is made incapable of being seen from a plasma generating region 224 through the gas blowout ports 239. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005093615(A) 申请公布日期 2005.04.07
申请号 JP20030323546 申请日期 2003.09.16
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MAEDA IKUHIRO;SATO TAKAYUKI
分类号 H01L21/3065;H01L21/205;(IPC1-7):H01L21/205;H01L21/306 主分类号 H01L21/3065
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