发明名称 |
Silicon light-receiving device |
摘要 |
A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelectric conversion effect for light in a wavelength range of 100-1100 nm is generated by a quantum confinement effect in the p-n junction with the substrate. First and second electrodes are formed on the substrate so as to be electrically connected to the doped region. Due to the ultra-shallow doped region on the silicon substrate, a quantum confinement effect is generated in the p-n junction. Even though silicon is used as a semiconductor material, the quantum efficiency of the silicon light-receiving device is far higher than that of a conventional solar cell, owing to the quantum confinement effect. The silicon light-receiving device can also be formed to absorb light in a particular or large wavelength band, and used as a solar cell.
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申请公布号 |
US2005073019(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
US20040502765 |
申请日期 |
2004.07.28 |
申请人 |
LEE EUN-KYUNG;CHOI BYOUNG-LYONG;KIM JUN-YOUNG |
发明人 |
LEE EUN-KYUNG;CHOI BYOUNG-LYONG;KIM JUN-YOUNG |
分类号 |
H01L31/10;H01L31/028;H01L31/0352;H01L31/042;H01L31/068;H01L31/103;(IPC1-7):H01L31/06 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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