发明名称 Composite optical lithography method for patterning lines of significantly different widths
摘要 A composite patterning technique may include three lithography processes. A first lithography process forms a periodic pattern of alternating continuous lines of substantially equal width and spaces on a first photoresist. A second lithography process uses a non-interference lithography technique to break continuity of the patterned lines and form portions of desired integrated circuit features. The first photoresist may be developed. A second photoresist is formed over the first photoresist. A third lithography process uses a non-interference lithography technique to expose a pattern on the second photoresist and form remaining desired features of an integrated circuit pattern.
申请公布号 US2005074698(A1) 申请公布日期 2005.04.07
申请号 US20030681030 申请日期 2003.10.07
申请人 INTEL CORPORATION 发明人 BORODOVSKY YAN
分类号 G03F7/20;(IPC1-7):G03F9/00;G03B27/00 主分类号 G03F7/20
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