发明名称 Memory bit line leakage repair
摘要 Techniques for replacing and eliminating paths causing channel leakage current. In one embodiment, one or more precharge enable transistors and a precharge enable signal are added to a circuit configuration. The precharge enable transistors are designed to remain on and simply pass a signal in a properly functioning path. When a leakage path is identified, such as during IDDQ testing, the precharge enable signal is set to turn off the precharge enable transistors. When the precharge enable transistors are off, the leakage path is disrupted, and the leakage current stopped. The path may be replaced with a redundant path.
申请公布号 US2005073893(A1) 申请公布日期 2005.04.07
申请号 US20030403101 申请日期 2003.03.28
申请人 CHEN NAN;ZHONG CHENG;SANI MEHDI HAMIDI 发明人 CHEN NAN;ZHONG CHENG;SANI MEHDI HAMIDI
分类号 G11C7/00;G11C29/00;G11C29/50;(IPC1-7):G11C7/00 主分类号 G11C7/00
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