发明名称 SNAGAU SOLDER BUMP, METHOD OF MANUFACTURING THE SAME AND METHOD OF BONDING LIGHT EMITTING DEVICE USING METHOD OF MANUFACTURING SOLDER BUMP
摘要 <p>A method for fabricating a SnAgAu solder bump is provided to prevent a driving voltage of a light emitting device from increasing by performing a flip chip bonding process on the light emitting device and a sub mount at a temperature much lower than that of a conventional technique. The first material supply layer is formed on a base substrate(40). A solder bump(56a,58a) made of a two-element based compound is formed on the first material supply layer. The resultant structure having the solder bump is heated. The first material supply layer is composed of a gold layer, a palladium layer, a nickel layer or a sodium layer. The solder bump is made of a compound including SnAg.</p>
申请公布号 KR20050032290(A) 申请公布日期 2005.04.07
申请号 KR20030068321 申请日期 2003.10.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHAE, SU HEE;CHOI, WON KYOUNG;KWAK, JOON SEOP
分类号 B23K35/00;B23K35/26;H01L21/60;H01L23/485;H01L33/32;H01L33/62;H01S5/022;(IPC1-7):H01L21/60 主分类号 B23K35/00
代理机构 代理人
主权项
地址