| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of crystallizing a thin semiconductor film by which large crystal grains substantially containing no uncrystallized portion can be formed, and to provide a crystallizer, a phase shifter, a thin film transistor, and a display device. SOLUTION: During the course of crystallizing a non-single-crystal thin semiconductor film, the crystal growth of an annular interface, which is formed around the optical axis of energy light and has a prescribed diameter and on which the crystallization starting area of the non-single-crystal thin film exists, to the outside is started earlier than that to the inside. In addition, a molten state is maintained inside the annular interface in an initial stage of the crystal growth to the outside, and the crystal growth to the inside is started with a time lag behind the crystal growth to the outside. Through this course, crystal grains having fan-like shapes or polygonal shapes in a top view are obtained across inner and outer areas of the annular interface. COPYRIGHT: (C)2005,JPO&NCIPI |
