SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device with which source and drain regions can be formed easily. SOLUTION: A silicon oxide film 13 is formed by heat-oxidizing the upper part of an amorphous silicon film pattern 10. The dimension of the silicon oxide film 13 in the widthwise direction is larger than that of the amorphous silicon film pattern 10 in the widthwise direction. Then a pocket region and an extension region are formed, by injecting an impurity into a silicon substrate 1 from the oblique upside of the substrate 1 by using the silicon oxide film 13 as a mask. Next, the source and drain regions are formed by changing the injection angle of the impurity. COPYRIGHT: (C)2005,JPO&NCIPI