发明名称 THIN FILM WIRING LAYER
摘要 PROBLEM TO BE SOLVED: To provide a thin film wiring layer which is effectively used as a wiring layer for flat display apparatus and can improve moisture-proof property while ensuring wet etching property and heat-proof characteristic. SOLUTION: The thin film wiring layer is formed on a substrate and is formed as an alloy layer including one or two kinds of additive elements of 1 to 10 atom% selected from (Ti, Zr, Hf, V, Nb, Ta, Mo, and W) and a remainder substantially formed of Ni. Preferably, a coating layer includes at least Nb of 1 to 7 atom%, and also includes Mo and/or W in the total amount of 3 to 10 atom% together with Nb. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005093571(A) 申请公布日期 2005.04.07
申请号 JP20030322456 申请日期 2003.09.16
申请人 HITACHI METALS LTD 发明人 MURATA HIDEO
分类号 G02F1/1343;C23C14/14;C23C14/34;H01B1/02;H01B5/14;H01J11/22;H01J11/34;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;H01L29/786;H05K1/09;(IPC1-7):H01L21/320;G02F1/134 主分类号 G02F1/1343
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