发明名称 |
METHOD OF MANUFACTURING METAL-OXIDE-SEMICONDUCTOR TRANSISTOR |
摘要 |
A method of manufacturing a MOS transistor is provided. A gate insulation layer and a conductive layer are sequentially formed over a substrate. A pre-amorphization implantation is carried out to amorphize the conductive layer. The conductive layer and the gate insulation layer are patterned to form a gate structure. A first spacer is formed on the sidewall of the gate structure. A second pre-amorphization implantation is carried out to amorphize a portion of the substrate. A doped source/drain extension region is formed in the substrate on each side of the first spacer. A second spacer is formed on the sidewall of the first spacer and then a doped source/drain region is formed in the substrate on each side of the second spacer. A solid phase epitaxial process is carried out to convert the doped source/drain extension region and the doped source/drain region into a source/drain terminal. In the pre-amorphization implantations, dopants having an ionic radius greater than the germanium ion are used.
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申请公布号 |
US2005074931(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
US20030681768 |
申请日期 |
2003.10.07 |
申请人 |
WANG YU-REN;LEE CHUN-YI;CHEN YU-KUN;YANG NENG-HUI |
发明人 |
WANG YU-REN;LEE CHUN-YI;CHEN YU-KUN;YANG NENG-HUI |
分类号 |
H01L21/00;H01L21/265;H01L21/28;H01L21/336;H01L29/78;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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