发明名称 |
METHOD OF PRODUCING SELF-SUPPORTING SUBSTRATES COMPRISING III-NITRIDES BY MEANS OF HETEROEPITAXY ON A SACRIFICIAL LAYER |
摘要 |
The invention relates to a method for the production of self-supporting substrates comprising element III nitrides. More specifically, the invention relates to a method of producing a self-supporting substrate comprising a III-nitride, in particular, gallium nitride (GaN), which is obtained by means of epitaxy using a starting substrate. The invention is characterised in that it consists in depositing a single-crystal silicon-based intermediary layer by way of a sacrificial layer which is intended to be spontaneously vaporised during the III-nitride epitaxy step. The inventive method can be used, for example, to produce a flat, self-supporting III-nitride layer having a diameter greater than 2''. |
申请公布号 |
WO2005031045(A2) |
申请公布日期 |
2005.04.07 |
申请号 |
WO2004FR02416 |
申请日期 |
2004.09.24 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS);FELTIN, ERIC, PASCAL;BOUGRIOUA, ZAHIA;NATAF, GILLES |
发明人 |
FELTIN, ERIC, PASCAL;BOUGRIOUA, ZAHIA;NATAF, GILLES |
分类号 |
C30B25/02;C30B25/18;H01L21/20 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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