METHOD OF FORMING AND REPAIRING A LITHOGRAPHIC TEMPLATE HAVING A GAP DEFECT

摘要

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template (10) is formed having a relief structure (26) and a repaired gap defect (36) within the relief structure (26). The template (10) is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template (10) in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (40).