METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to embody a fine pattern of a semiconductor device by eliminating the necessity of forming a photoresist layer having the same thickness as a conventional photoresist layer. The first interlayer dielectric(202) is formed on a semiconductor substrate(201). The first etch stop layer(203) having the first opening for defining a via hole region is formed on the first interlayer dielectric. The first etch control layer(204) of a spacer type is formed on the sidewall of the first etch stop layer. The second interlayer dielectric(205) is formed on the front surface of the substrate. The second etch stop layer(206) having the second opening for defining a trench region is formed on the second interlayer dielectric. The second etch control layer(207) of a spacer type is formed on the sidewall of the second etch stop layer. The second interlayer dielectric exposed by the first etch stop layer and the first etch control layer is etched to form a trench(208). The second interlayer dielectric exposed by the second etch stop layer and the second etch control layer is etched to form a via hole.