发明名称 MEMS STRUCTURE FOR METAL INTERCONNECTION AND FABRICATION METHOD THEREOF
摘要 An MEMS structure for a metal interconnection and a fabrication method thereof are provided to manufacture an MEMS structure having metal wires completely filled by depositing a seed layer. A seed layer is deposited with respect to the entire surface of the upper part of a substrate(100). A metal film is manufactured by plating a first metal on the entire surface of the upper part of the seed layer(120). A predetermined area of the lower part of the seed layer(120) is etched, thereby manufacturing at least one penetration hole. A second metal is plated in at least one penetration hole, thereby manufacturing a metal wiring for electrically connecting to external elements linked with the lower and upper surface of the substrate(100). The seed layer(120) and the metal film are removed.
申请公布号 KR20050032171(A) 申请公布日期 2005.04.07
申请号 KR20030068181 申请日期 2003.10.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM, DONG SIK
分类号 B81C1/00;(IPC1-7):B81C1/00 主分类号 B81C1/00
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