发明名称 |
MEMS STRUCTURE FOR METAL INTERCONNECTION AND FABRICATION METHOD THEREOF |
摘要 |
An MEMS structure for a metal interconnection and a fabrication method thereof are provided to manufacture an MEMS structure having metal wires completely filled by depositing a seed layer. A seed layer is deposited with respect to the entire surface of the upper part of a substrate(100). A metal film is manufactured by plating a first metal on the entire surface of the upper part of the seed layer(120). A predetermined area of the lower part of the seed layer(120) is etched, thereby manufacturing at least one penetration hole. A second metal is plated in at least one penetration hole, thereby manufacturing a metal wiring for electrically connecting to external elements linked with the lower and upper surface of the substrate(100). The seed layer(120) and the metal film are removed.
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申请公布号 |
KR20050032171(A) |
申请公布日期 |
2005.04.07 |
申请号 |
KR20030068181 |
申请日期 |
2003.10.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM, DONG SIK |
分类号 |
B81C1/00;(IPC1-7):B81C1/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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