| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device capable of improving an access time in a burst mode without enlarging a chip area nor increasing power consumption. <P>SOLUTION: A block unit BU is divided into memory mats MATA, MATB, respectively, on the basis of an internal address AE2. When the internal address AE2 is "1", ascending data read from the memory mat MATB to a start address is carried out, and also an internal address AE<4:3> is incremented by an address conversion circuit and 4-word block BLK# containing a word to be selected next from the memory mat MATA. Consequently, the internal address is incremented on the basis of the start address, and a period for reading each word contained in the following 4-word block BLK# can be secured at least, and decoding processing or the like of the following input address in the period can be performed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
