| 摘要 |
PROBLEM TO BE SOLVED: To make uniform the composition of a compound semiconductor thin film to perform a uniform doping for a carrier concentration. SOLUTION: In a vapor deposition for a compound semiconductor, an organic metal vapor deposition system comprises a susceptor 3 for retaining a substrate 2 in a growing chamber 1, a raw material introduction part 10 for introducing a raw material, a heater 4 constituted to be divided into a plurality of zones, and a masking shield 29 for preventing a raw material gas from being heated. Further, the compound semiconductor thin film is grown on a compound semiconductor substrate by using the system to perform the p-type doping. Heating conditions of the plurality of zones of the heater 4 are previously and temporarily set to try to grow the compound semiconductor thin film and perform the p-type doping, and a p-type carrier concentration distribution of the obtained compound semiconductor thin film is measured. A temperature distribution on growing is estimated from this measured value to obtain required heating conditions for each zone of the heater 4 for making uniform the temperature distribution, and an output of the heater 4 is controlled for each zone according to the heating conditions, thereby growing the compound semiconductor thin film to perform the p-type doping. COPYRIGHT: (C)2005,JPO&NCIPI
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