METHOD FOR CVD EPITAXIAL GROWTH

摘要

PROBLEM TO BE SOLVED: To provide a method for CVD epitaxial growth by which the thickness of a crystal growth film can be uniformized without rotating a substrate. SOLUTION: In the method for the CVD epitaxial growth of SiC, the partial pressure of a gas containing x mol Si in a 1 mol material gas is adjusted to≥33.33/x(Pa) when the gas is used as a feed gas. In this case, it is preferable that the difference between the central temperature of the gas existing on a substrate and the temperature of the substrate is≤200°C and the central temperature of the gas is≥1,300°C. COPYRIGHT: (C)2005,JPO&NCIPI