| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor deposition film which is formed by a plasma CVD process, is free from any problem such as peeling, and has excellent durability and a barrier effect to water. SOLUTION: In the chemical vapor deposition film deposited on a surface of a substrate by the plasma CVD process by using an organic metal compound and oxidizing gas as reaction gases, the chemical vapor deposition film has a barrier layer area located on the substrate side and an outer surface protective layer area located on the surface of the barrier layer area. By taking three elements of metal element (M), oxygen (O) and carbon (C) derived from the organic metal compound as references, the barrier layer area has the (M+O) concentration higher than that in the outer surface protective layer area, and (M+O) concentration is substantially and continuously changing in an interface part between the barrier layer area and the outer surface protective layer area, and the (C) concentration in the outer surface protective layer area is≥15 element%. COPYRIGHT: (C)2005,JPO&NCIPI
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