发明名称 Submicron size metal deposit apparatus
摘要 The method by which a small amount of gaseous organic metal is loaded in a vacuum atmosphere, the gaseous organic metal is decomposed by irradiation with an electron beam, and metal components are deposited on a beam-irradiated portion has the problem that the deposited portion is rendered amorphous by hydrocarbon contamination, so that the conductivity and strength of the deposit considerably deteriorate. The invention solves the problem by a method by which the gaseous organic metal is decomposed by irradiation with the electron beam and the metal components are deposited on the beam-irradiated portion, wherein the deposited portion is irradiated with a laser, heated by a heater, or irradiated with infrared rays during deposition, thereby allowing the molding of a crystalline metal deposit with excellent conductivity and strength.
申请公布号 US2005072360(A1) 申请公布日期 2005.04.07
申请号 US20040910359 申请日期 2004.08.04
申请人 HIDAKA KISHIO;FUJIEDA TADASHI;HAYASHIBARA MITSUO 发明人 HIDAKA KISHIO;FUJIEDA TADASHI;HAYASHIBARA MITSUO
分类号 C23C16/48;C23C16/00;C23C16/04;C23C16/18;C23C16/46;C23C16/52;H01L21/00;H01L21/285;H01L21/428;(IPC1-7):C23C16/00 主分类号 C23C16/48
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