发明名称 |
High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics |
摘要 |
A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary oxide over a silicon substrate; forming a polysilicon layer over the gate dielectric layer stack; lithographically patterning and etching to form a gate structure; and, carrying out at least one plasma treatment of the gate structure comprising a plasma source gas selected from the group consisting of H2, N2, O2, and NH3.
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申请公布号 |
US2005074978(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
US20030677158 |
申请日期 |
2003.10.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG MING-FANG;HOU TUO-HUNG;MAI KAI-LIN;YAO LIANG-GI;CHEN SHIH-CHANG |
分类号 |
H01L21/28;H01L21/316;H01L21/336;H01L29/51;H01L29/78;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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