发明名称 |
Process to manufacture nonvolatile MOS memory device |
摘要 |
Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.
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申请公布号 |
US2005074939(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
US20030676896 |
申请日期 |
2003.10.01 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
HO VINCENT;CHOI WEE KIONG;CHAN LAP;CHIM WAI KIN;NG VIVIAN;HENG CHENG LIN;TEO LEE WEE |
分类号 |
H01L21/28;H01L21/336;H01L21/8242;H01L29/423;H01L29/788;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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