| 摘要 |
After etching a silicon surface it is immediately immersed in an alcoholic solution of the triethyl or trimethyl ester of boric acid and then dried at 80-150 DEG C. The boron compound should preferably be an electron acceptor and thus be able to combine with surface electrons. In the embodiment, a (111) surface is treated. Gaseous BF3 may also be used. |
