TRANSISTOR HAVING RAISED DRAIN AND METHOD OF FORMING THE SAME

摘要

A transistor having a raised drain and its fabricating method are provided to reduce an area of the transistor and control a breakdown voltage without lowering an on-resistance characteristic. A gate is formed on a channel region of an active region defined on a semiconductor substrate(100). A source is formed on a surface of the active region corresponding to one side of the gate. A drain is opposite to the source. The drain and the source are positioned at both sides of the gate. The drain has a raised part which is projected from a surface of the semiconductor substrate. The gate includes a dielectric layer(108) formed on the channel region and a conductive layer(110) formed on the dielectric layer.