METHOD OF MANUFACTURING A TRANSISTOR IN A SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a transistor of a semiconductor device is provided to prevent the degradation of leakage current characteristics in a source/drain junction region due to a metal-silicide layer by performing additionally a source/drain ion-implantation on a moat portion of an isolation layer. A gate oxide layer(23) and a gate electrode(24) are sequentially formed on a semiconductor substrate(21) with an isolation layer(22). A first source/drain ion-implantation is performed thereon. A second source/drain ion-implantation is performed on a moat portion(M) of the isolation layer. A source/drain junction region(26) with a non-uniform depth is completed by performing a heat treatment thereon. A metal-silicide layer(27) is formed on the source/drain junction region.